TLP733,tlp734 2002-09-25 1 toshiba photocoupler gaas ired&photo ? transistor TLP733, tlp734 office machine household use equipment solid state relay switching power supply the toshiba TLP733 and tlp734 consist of a photo ? transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic dip. tlp734 is no ? base internal connection for high ? emi environments. collector ? emitter voltage: 55 v (min.) current transfer ratio: 50% (min.) rank gb: 1 00% (min.) ul recognized: ul 1 577, file no. e67349 bsi approved: bs en60065: 1 994 certificate no. 7364 bs en60950: 1 992 certificate no. 7365 semko approved: ss4330784 certificate no. 9325 1 63, 9522 1 42 isolation voltage: 4000 v rms (min.) option (d4) type vde approved: din vde0884 / 06.92, certificate no. 74286, 9 1 808 maximum operating insulation voltage: 630, 890 v pk highest permissible over voltage: 6000, 8000 v pk (note) when a vde0884 approved type is needed, please designate the ?option (d4)? 7.62 mm pich 1 0. 1 6 mm pich standard type tlpf type creepage distance : 7.0 mm (min.) 8.0 mm (min.) clearance : 7.0 mm (min.) 8.0 mm (min.) internal creepage path : 4.0 mm (min.) 4.0 mm (min.) insulation thickness : 0.5 mm (min.) 0.5 mm (min.) pin configurations (top view) 1: anode 2: cathode 3: nc 4: emitter 5: collector 6: base 5 6 4 2 1 3 TLP733 1: anode 2: cathode 3: nc 4: emitter 5: collector 6: nc 5 6 4 2 1 3 tlp734 unit in mm toshiba 11 ? 7a8 weight: 0.42 g
TLP733,tlp734 2002-09-25 2 current transfer ratio current transfer ratio (%) (i c / i f ) i f = 5ma, v ce = 5v, ta = 25c type classi fication *1 min. max. marking of classification (none) 50 600 blank, y, y , g, g , b, b , gb 50 150 y, y rank gr 100 300 g, g 200 600 b, b TLP733 tlp734 rank gb 100 600 g, g , b, b , gb *1: ex. rank gb: TLP733 (gb) note: application type name for certification test, please use standard product type name, i.e. TLP733 (gb): TLP733 maximum ratings (ta = 25c) characteristic symbol rating unit forward current i f 60 ma forward current derating (ta 39c) ? i f / c 0.7 ma / c peak forward current (100 s pulse, 100 pps) i fp 1 a reverse voltage v r 5 v led junction temperature t j 125 c collector emitter voltage v ceo 55 v collector base voltage (TLP733) v cbo 80 v emitter collector voltage v eco 7 v emitter base voltage (TLP733) v ebo 7 v collector current i c 50 ma power dissipation p c 150 mw power dissipation derating (ta 25c) ? p c / c 1.5 mw / c detector junction temperature t j 125 c storage temperature range t stg 55~125 c operating temperature range t opr 40~100 c lead soldering temperature (10 s) t sol 260 c total package power dissipation p t 250 mw total package power dissipation derating (ta 25c) ? p t / c 2.5 mw / c isolation voltage (ac, 1 min., r.h. 60%) bv s 4000 v rms
TLP733,tlp734 2002-09-25 3 recommended operating conditions characteristic symbol min. typ. max. unit supply voltage v cc D 5 24 v forward current i f D 16 25 ma collector current i c D 1 10 ma operating temperature t opr 25 D 85 c individual electrical characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit forward voltage v f i f = 10 ma 1.0 1.15 1.3 v reverse current i r v r = 5 v D D 10 a led capacitance c t v = 0, f = 1 mhz D 30 D pf collector emitter breakdown voltage v (br)ceo i c = 0.5 ma 55 D D v emitter collector breakdown voltage v (br)eco i e = 0.1 ma 7 D D v collector base breakdown voltage (TLP733) v (br)cbo i c = 0.1 ma 80 D D v emitter base breakdown voltage (TLP733) v (br)ebo i e = 0.1 ma 7 D D v v ce = 24 v (ambient light below 1000 ? x) D 0.01 (2) 0.1 (10) a collector dark current i ceo v ce = 24 v (ambient light ta = 85c below 1000 ? x) D 2 (4) 50 (50) a collector dark current (TLP733) i cer v ce = 24 v, ta = 85c r be = 1m ? D 0.5 10 a collector dark current (TLP733) i cbo v cb = 10 v D 0.1 D na dc forward current gain (TLP733) h fe v ce = 5 v, i c = 0.5 ma D 400 D D detector capacitance collector to emitter c ce v = 0, f = 1 mhz D 10 D pf
TLP733,tlp734 2002-09-25 4 coupled electrical characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit 50 ? 600 current transfer ratio i c / i f i f = 5 ma, v ce = 5 v rank gb 100 ? 600 % ? 60 ? saturated ctr i c / i f (sat) i f = 1 ma, v ce = 0.4 v rank gb 30 ? ? % base photo current i pb i f = 5 ma, v cb = 5 v ? 10 ? % i c = 2.4 ma, i f = 8 ma ? ? 0.4 ? 0.2 ? collector emitter saturation voltage v ce (sat) i c = 0.2 ma, i f = 1 ma rank gb ? ? 0.4 v isolation characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit capacitance (input to output) c s v s = 0, f = 1 mhz ? 0.8 ? pf isolation resistance r s v s = 500 v, r.h. 60% 110 12 10 14 ? ? ac, 1 minute 4000 ? ? ac, 1 second, in oil ? 10000 ? vrms isolation voltage bv s dc, 1 minute, in oil ? 10000 ? vdc switching characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit rise time t r ? 2 ? fall time t f ? 3 ? turn on time t on ? 3 10 turn off time t off v cc = 10 v, i c = 2 ma r l = 100 ? ? 3 10 s turn on time t on ? 3 ? storage time t s ? 40 ? turn off time t off r l = 1.9 k ? (fig.1) r be = open v cc = 5 v, i f = 16 ma ? 90 ? s turn on time t on ? 3 ? storage time t s ? 30 ? turn off time t off r l = 1.9 k ? (fig.1) r be = 220 k ? (TLP733) v cc = 5 v, i f = 16 ma ? 60 ? s
TLP733,tlp734 2002-09-25 5 fig. 1 switching time test circuit t off t on 4.5v v ce i f t s 0.5v v cc r l i f v ce r be
TLP733,tlp734 2002-09-25 6 ? v f / ? ta ? i f forward current i f (ma) forward voltage temperature coefficient ? v f / ? ta (mv / c) 0.8 0.1 2.8 50 2.4 2.0 1.6 1.2 3 10 0.3 1 0.4 30 ambient temperature ta (c) i f ? ta allowable forward current i f (ma) 0 20 40 60 120 60 40 20 100 0 20 80 80 100 p c ? ta ambient temperature ta (c) allowable collector power dissipation p c (mw) 0 20 60 100 120 120 80 40 200 0 20 40 80 160 i fp ? v fp pulse forward voltage v f (v) pulse forward current i fp (ma) 1000 1 0.4 3 10 5 2.0 2.4 1.2 1.6 0.8 30 100 50 300 500 2.8 pulse width 10 s repetitive frequency = 100 hz ta = 2 5 c i fp ? d r duty cycle ratio d r pulse forward current i fp (ma) 10 3000 3 300 1000 500 3 10 0 30 100 50 3 10 1 3 10 2 10 3 pulse width 100 s ta = 2 5 c i f ? v f forward voltage v f (v) forward current i f (ma) 100 0.1 1.0 50 10 5 3 1.2 1.4 1.6 1.8 30 1 0.5 0.3 0.6 0.8 ta = 25c
TLP733,tlp734 2002-09-25 7 i c ? v ce collector-emitter voltage v ce (v) collector current i c (ma) 2 4 8 10 30 20 10 50 0 0 6 40 ta = 25c 20 ma 15 ma 10 ma i f = 5 ma 50 ma 30 ma p c (max.) i c ? v ce collector-emitter voltage v ce (v) collector current i c (ma) 0.2 0.4 0.8 1.2 15 10 5 30 0 0 0.6 1.0 20 25 ta = 2 5 c 20 ma 5 ma 10 ma i f = 2 ma 50 ma 30 ma 40 ma forward current i f (ma) i c ? i f collector current i c (ma) 3 1 30 0.01 10 0.3 0.03 0.1 1 10 300 0.1 3 30 0.3 100 ta = 25c v ce = 5 v v ce = 0.4 v sample a sample b forward current i f (ma) i c / i f ? i f current transfer ratio i c / i f (%) 1 10 100 300 100 50 1000 10 0.1 500 30 3 30 0.3 ta = 2 5 c v ce = 5 v v ce = 0.4 v sample a sample b forward current i f (ma) TLP733 i c ? i f at r be collector current i c (ma) 1 10 100 50 3 100 0.1 0.1 1 30 3 30 0.3 10 0.3 500k ? 100k ? 50k ? r be= ta = 25c v ce = 5 v forward current i f (ma) TLP733 i pb ? i f base photo current i pb (a) 1 10 100 300 100 3 1000 0.1 0.1 1 30 3 30 0.3 10 0.3 ta = 2 5 c i f r be v cc a i f v cb a v cb = 0 v v cb = 5 v
TLP733,tlp734 2002-09-25 8 i ceo / ta ambient temperature ta (c) collector dark current i ceo (a) 10 1 10 4 0 120 80 100 20 40 60 10 1 10 2 10 3 10 0 ambient light below = 0 ? x v ce = 24 v 10 v 5 v ambient temperature ta (c) v ce (sat) ? ta collector-emitter saturation voltage v ce (sat) (v) 20 0 20 40 100 0.16 0.12 0.08 0.24 0.04 40 0.20 60 80 i f = 5 ma i c = 1 ma load resistance r l (k ? ) TLP733 switching time ? r l switching time (s) 10 50 300 30 10 5 100 1 1 50 3 30 100 3 5 t off ts t on ta = 2 5 c i f = 16 ma v cc = 5 v r be = 220k ? i c ? ta ambient temperature ta (c) collector current i c (ma) 100 0.1 40 3 100 1 0.5 40 60 20 0 20 80 0.3 10 50 30 5 v ce = 5 v 1 m a 5 m a 10 m a i f = 25 m a 0.5 m a
TLP733,tlp734 2002-09-25 9 base emitter resistance r be ( ? ) switching time r be switching time (s) 3m 30 10 5 50 1 100k 3 300k 1m t on t off ts ta = 25c i f = 16 ma v cc = 5 v r l = 1.9k ? load resistance r l (k ? ) switching time ? r l switching time (s) 10 50 100 30 10 300 3000 1 1 1000 3 30 3 5 100 t off ts t on ta = 2 5 c i f = 16 ma v cc = 5 v
TLP733,tlp734 2002-09-25 10 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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